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  1. Novodvorsky OA, Gorbatenko LS, Panchenko VY, Khramova OD, Cherebilo YA, Wenzel C, Bartha JW, Bublik VT, Shcherbachev KD.
    Optical and structural characteristics of Ga-doped ZnO films.
    Fizika i tekhnika poluprovodnicov / Semiconductors, 2009, 4, vol.43, p.419-424 (6)
    10.1134/S1063782609040034
  2. Orlov AF, Bublik VT, Vdovin VI, Agafonov YA, Balagurov LA, Zinenko VI, Kulemanov IV, Shcherbachev KD.
    On the state of Mn impurity implanted in Si.
    Crystallography Reports, 2009, 4, vol.54, p.555-557 (3)
    10.1134/S1063774509040038
  3. Orlov AF, Granovsky AB, Balagurov LA, Kulemanov IV, Parkhomenko YN, Perov NS, Gan’shina EA, Bublik VT, Shcherbachev KD, Kartavykh AV, Vdovin VI, Sapelkin A, Saraikin VV, Agafonov YA, Zinenko VI, Rogalev A, Smekhova A.
    Structure, electrical and magnetic properties, and the origin of the room temperature ferromagnetism in Mn-implanted Si.
    Journal of Experimental and Theoretical Physics (JETP) / Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2009, 4, vol.109, p.602-608 (7)
    10.1134/S1063776109100069
  4. Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Yugova TG, Petrova EA, Amano H, Kawashima T, Scherbatchev KD, Bublik VT.
    Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films.
    Journal of Applied Physics, 2009, 6, vol.105
    10.1063/1.3078769
  5. Shcherbachev KD, Privezentsev VV.
    Defect structure of zinc doped silicon studied by X-ray diffuse scattering method.
    Physica B: Condensed Matter, 2009, 23-24, vol.404, p.4630-4633 (4)
    10.1016/j.physb.2009.08.301